2SK2056 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
EXICON MOSFETs are rugged and robust, and unlike bipolar transistors they are free from secondary breakdown; this means the power rating does not derate with applied voltage. Devices are easily paralleled for very high-power applications. ZXM41N10F, SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET. Power MOSFETs with lateral structure are mainly used in high-end audio amplifiers and high-power PA systems. Their advantage is a better behaviour in the saturated region (corresponding to the linear region of a bipolar transistor) than the vertical MOSFETs. Vertical MOSFETs are designed for switching applications.
Наименование прибора: 2SK2056
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
Тип корпуса: TO220F
2SK2056 Datasheet (PDF)
0.1. 2sk2056.pdf Size:45K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2056 DESCRIPTION Drain Current ID= 4A@ TC=25 Drain Source Voltage- : VDSS= 800V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 80
8.1. 2sk2053.pdf Size:122K _1
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2053N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2053 is an N-channel vertical MOS FET. Because it 5.7 0.1can be driven by a voltage as low as 1.5 V and it is not 2.0 0.2 1.5 0.1necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems su
8.2. 2sk2054.pdf Size:58K _1
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2054N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2054 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V.2.0 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is ideal f
8.3. 2sk2055.pdf Size:58K _1
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2055N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2055 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V.2.0 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is ideal f
8.4. 2sk2051-l 2sk2051-s.pdf Size:231K _1
FUJI POWER MOSFET2SK2051-L,SN-CHANNEL SILICON POWER MOSFETF-II SERIESFeatures Outline DrawingsHigh speed switchingT-Pack(L) T-Pack(S)Low on-resistanceNo secondary breakdown10+0.50.24.5Low driving power1.32High voltageVGS=30V Guarantee+0.20.2Applications1.2 0.10.80.4+0.2Switching regulators2.75.08UPS1. Gate2, 4. Drain DC-DC convert
8.5. 2sk2057.pdf Size:187K _toshiba
8.6. 2sk2058.pdf Size:98K _sanyo
Ordering number:ENN4315N-Channel Silicon MOSFET2SK2058Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2056A Low-voltage drive.[2SK2058]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at
8.7. 2sk2054c.pdf Size:856K _renesas
8.8. 2sk2059l 2sk2059s.pdf Size:200K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. 2sk2052-r.pdf Size:144K _fuji
8.10. 2sk2050.pdf Size:201K _fuji
N-channel MOS-FET2SK2050F-III Series 100V 0,055 30A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
8.11. 2sk2050.pdf Size:217K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK2050DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER V
8.12. 2sk2052.pdf Size:221K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK2052DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALU
8.13. 2sk2057.pdf Size:218K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK2057DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
Другие MOSFET... HFP80N75, HFP830, HFP840, HFR1N60, HFU1N60, HFU2N60, HFU70N03V, 2SJ655, STF5N52U, 2SK2617ALS, 2SK3607-01MR, AO4472, AON6324, SD2932, STK1820F, STP55NE06, STP55NE06FP.
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02Vertical Mosfet Amplifier
Vertical Mosfet Structure
Большой англо-русский и русско-английский словарь. 2001.
Vertical Mosfet Ppt
Смотреть что такое 'vertical-channel FET' в других словарях:
Vertical Diffused Mosfet
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